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ST8550B Datasheet(PDF) 1 Page - Nanjing International Group Co |
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ST8550B Datasheet(HTML) 1 Page - Nanjing International Group Co |
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1 / 5 page ![]() 8550 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25℃) Symbol Value Unit Collector Emitter Voltage -VCEO 25 V Collector Base Voltage -VCBO 40 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 800 mA Peak Collector Current -ICM 1 A Base Current -IB 100 mA Power Dissipation Ptot 625 1) mW Junction Temperature Tj 150 OC Storage Temperature Range TS -55 to +150 OC 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case |
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