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ZXTP07012EFF Datasheet(PDF) 2 Page - Diodes Incorporated

Part # ZXTP07012EFF
Description  12V PNP LOW SATURATION TRANSISTOR
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXTP07012EFF Datasheet(HTML) 2 Page - Diodes Incorporated

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ZXTP07012EFF
Document number: DS33727 Rev. 3 - 2
2 of 7
www.diodes.com
January 2016
© Diodes Incorporated
ZXTP07012EFF
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-12
V
Collector-Emitter Voltage
VCEO
-12
V
Emitter-Base Voltage
VEBO
-7
V
Continuous Collector Current
IC
-4
A
Peak Pulse Current
ICM
-8
A
Base Current
IB
-1
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Note 5)
PD
0.84
6.72
W
mW/°C
(Note 6)
1.34
10.72
(Note 7)
1.50
12.0
(Note 8)
2.0
16.0
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
149
°C/W
(Note 6)
93
(Note 7)
83
(Note 8)
60
Thermal Resistance, Junction to Lead
(Note 9)
RθJL
43.8
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 10)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge
– Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge
– Machine Model
ESD MM
400
V
C
Notes:
5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 50mm x 50mm 2oz copper.
8. Same as Note 7, whilst measured at t < 5 seconds.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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