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CT2300-R3 Datasheet(PDF) 1 Page - CT Micro International Corporation |
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CT2300-R3 Datasheet(HTML) 1 Page - CT Micro International Corporation |
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1 / 11 page  CT Micro Rev 2 Proprietary & Confidential Page 1 Jun, 2015 CT2300-R3 N-Channel Enhancement MOSFET Package Outline Schematic Features • Drain-Source Breakdown Voltage VDSS 20 V • Drain-Source On-Resistance RDS(ON) 22m Ω, at VGS= 4.5V, IDS= 4.0A RDS(ON) 27m Ω, at VGS= 2.5V, IDS= 3.0A • Continuous Drain Current at TA=25℃ ID = 4.0A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • Lithium Ion Battery Description The CT2300-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Gate Source Drain Gate Drain Source |
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