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COP688EB Datasheet(PDF) 7 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # COP688EB
Description  8-Bit CMOS ROM Based Microcontrollers with 8k Memory, CAN Interface, 8-Bit A/D, and USART
PDF  75 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

COP688EB Datasheet(HTML) 7 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 9)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC)7V
Voltage at Any Pin
−0.3V to V
CC +0.3V
Total Current into V
CC Pins (Source)
100 mA
Total Current out of GND Pins (Sink)
110 mA
Storage Temperature Range
−65˚C to +150˚C
Note 9:
Absolute maximum ratings indicate limits beyond which damage to
the device may occur. DC and AC electrical specifications are not ensured
when operating the device at absolute maximum ratings.
DC Electrical Characteristics COP68xEB
−55˚C
≤ T
A ≤ +125˚C
Parameter
Conditions
Min
Typ
Max
Units
Operating Voltage
4.5
5.5
V
Power Supply Ripple (Note 10)
Peak-to-Peak
0.1 V
CC
V
Supply Current
V
CC = 5.5V, tc =1µs
16
mA
CKI = 10 MHz (Note 11)
HALT Current (Notes 12, 13)
V
CC = 5.5V, CKI = 0 MHz
10
µA
IDLE Current (Note 13)
V
CC = 5.5V, tc = 1 µs
5.5
mA
CKI = 10 MHz
Input Levels (V
IH,VIL)
Reset, CKI
Logic High
0.8V
CC
V
Logic Low
0.2V
CC
V
All Other Inputs
Logic High
0.7V
CC
V
Logic Low
0.2V
CC
V
Hi-Z Input Leakage
V
CC = 5.5V
±5µA
Input Pull-Up Current
V
CC = 5.5V, VIN = 0V
−35
−250
µA
Port G, L and M Input Hysteresis
(Note 16)
0.05V
CC
V
Output Current Levels
D Outputs
Source
V
CC = 4.5V, VOH = 3.3V
−0.4
mA
Sink
V
CC = 4.5V, VOL = 1.0V
9.0
mA
CAN Transmitter Outputs
Source (Tx1)
V
CC = 4.5V, VOH =VCC −0.1V
−1.5
mA
V
CC = 4.5V, VOH =VCC − 0.6V
−10
mA
Sink (Tx0)
V
CC = 4.5V, VOL = 0.1V
1.5
mA
V
CC = 4.5V, VOL = 0.6V
10
mA
All Others
Source (Weak Pull-Up)
V
CC = 4.5V, VOH = 2.7V
−9.0
−100
µA
Source (Push-Pull)
V
CC = 4.5V, VOH = 3.3V
−0.4
mA
Sink (Push-Pull)
V
CC = 4.5V, VOL = 0.4V
1.4
mA
TRI-STATE Leakage
V
CC = 5.5V
±5.0
µA
Allowable Sink/Source Current per Pin
D Outputs (sink)
12
mA
Tx0 (Sink) (Note 16)
30
mA
Tx1 (Source) (Note 16)
30
mA
All Other
2.5
mA
Maximum Input Current
Room Temp
±100
mA
without Latchup (Notes 14, 16)
RAM Retention Voltage, V
r (Note 15)
500 ns Rise and Fall Time
2.0
V
Input capacitance
(Note 16)
7
pF
Load Capacitance on D2
1000
pF
Note 10: Maxiumum rate of voltage change must be < 0.5V/ms
www.national.com
7



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