ESDARF02-1BU2CK datasheet(3/9 Pages) STMICROELECTRONICS

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ESDARF02-1BU2CK

Characteristics

Figure 3. Leakage current versus junction

temperature (typical values)

Figure 4. Junction capacitance versus

frequency (typical values)

100

125

150

VR = VRM = 3.6 V

I/O / GND

Tj(°C)

IR(nA)

0,0

0,1

0,2

0,3

0,4

0,5

1,00

10,00

100,00

1000,00

F(MHz)

C(pF)

Tj = 25 °C

Vosc = 30mV

Direct Reverse

Figure 5. ESD response to IEC 61000-4-2

(+8 kV contact discharge)

Figure 6. ESD response to IEC 61000-4-2

(-8 kV contact discharge)

50 V/div

20 ns/div

242 V 1

19 V 2

17 V 3

15 V 4

V : ESD peak voltage

V :clamping voltage at 30 ns

V :clamping voltage at 60 ns

V :clamping voltage at 100 ns

50 V/div

-241 V 1

-20 V 2

-16 V 3

-12 V4

V : ESD peak voltage

V :clamping voltage at 30 ns

V :clamping voltage at 60 ns

V :clamping voltage at 100 ns

20 ns/div

Figure 7. S21 attenuation measurement results

Figure 8. TLP measurements

10 M

30 M

100 M 300 M

1 G

3 G

10 G

-1.5

-1.4

-1.3

-1.2

-1.1

-1

-0.9

-0.8

-0.7

-0.6

-0.5

-0.4

-0.3

-0.2

-0.1

ESDARF02-1BU2CK

F (Hz)

Positive polarity

Negative polarity

IPP(A)

VCL(V)

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