Linear Integrated Systems

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Doc 201180 06/13/16 Rev#A7 ECN# LSJ689

FEATURES

ULTRA LOW NOISE

√Hz

LOW INPUT CAPACITANCE

Ciss = 8pF

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-55 to +150°C

Junction Operating Temperature

-55 to +150°C

Maximum Power Dissipation, TA = 25°C

300mW

500mW

Maximum Currents

Gate Forward Current

Maximum Voltages

Gate to Source

Gate to Drain

Features



Reduced Noise due

to process improvement



Monolithic Design



High slew rate



Low offset/drift voltage



Low gate leakage lgss & lg



High CMRR 102 dB

Benefits



Tight differential voltage match vs.

current



Improved op amp speed settling time

accuracy



Minimum Input Error trimming error

voltage



Lower intermodulation distortion

Applications



Wide band differential Amps



High speed temperature

compensated single ended input

amplifier amps



High speed comparators



Impedance Converters

Description

The LSJ689 high performance, P-Channel, monolithic dual JFET features extremely low noise, tight offset voltage and low drift

over temperature. It is targeted for use in a wide range of precision instrumentation applications. The SOT-23, TO-71 and SO-8

packages provide ease of manufacturing and the symmetrical pinouts prevent improper orientation. The SOT-23 and SO-8

packages are available in tape and reel, compatible with automatic assembly methods. (See packaging data)

LSJ689

LOW NOISE LOW CAPACITANCE

MONOLITHIC DUAL

P-CHANNEL JFET AMPLIFIER

PRELIMINARY

SOIC-A

TOP VIEW

TO-71

TOP VIEW

SOT-23

TOP VIEW

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