BUX33B datasheet(2/2 Pages) ISC

Part #	BUX33B

Description	isc Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

Logo

2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistor

BUX33B

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.2A; IB= 0

500

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 8A; IB= 2A

1.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 12A; IB= 3A

4.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 8A; IB= 2A

1.3

ICEX

Collector Cutoff Current

VCE=1000V;VBE= -1.5V

VCE=1000V;VBE= -1.5V;TC= 100℃

0.1

1.0

IEBO

Emitter Cutoff Current

VEB= 8V; IC= 0

2.0

hFE

DC Current Gain

IC= 8A; VCE= 3V

Current-Gain—Bandwidth Product

IC= 0.2A; VCE= 10V

MHz

Switching Times

Delay Time

IC= 8A; IB1= 2A; VCC= 240V,

tp= 20μs

0.1

μs

Rise Time

0.45

μs

Storage Time

IC= 8A; IB2= -2A; VCC= 240V,

tp= 20μs

3.0

μs

Fall Time

0.4

μs

BUX33B Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

BUX33B Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2

Datasheet Download

Link URL