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BUX33B Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUX33B Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Power Transistor BUX33B DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V(Min.) ·High Switching Speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCEV Collector-Emitter Voltage VBE= 1.5V 1000 V VCER Collector-Emitter Voltage RBE= 10Ω 1000 V VCEX Collector-Emitter Voltage VBE= -1.5V 550 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak 15 A IB Base Current 4 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W |
Similar Part No. - BUX33B |
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Similar Description - BUX33B |
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