DMP3028LSD

Document number: DS35966 Rev. 3 - 2

2 of 6

www.diodes.com

June 2013

© Diodes Incorporated

DMP3028LSD

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Steady

State

-6

-4.7

A

t<10s

-7.4

-5.8

A

Maximum Body Diode Forward Current (Note 6)

-2.5

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

-30

A

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

1.3

W

0.8

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

R

ΘJA

102

°C/W

t<10s

61

Total Power Dissipation (Note 6)

1.7

W

1.1

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

R

ΘJA

75

°C/W

t<10s

50

Thermal Resistance, Junction to Case (Note 6)

R

ΘJC

14.5

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-30

—

—

V

Zero Gate Voltage Drain Current

—

—

-1

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-1

—

-3

V

Static Drain-Source On-Resistance

—

20

25

m

Ω

—

29

38

Forward Transfer Admittance

—

11

—

S

Diode Forward Voltage

—

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

1241

—

pF

f = 1.0MHz

Output Capacitance

—

147

—

Reverse Transfer Capacitance

—

110

—

Gate Resistance

—

15

—

Ω

—

22

—

nC

—

10.9

—

Gate-Source Charge

—

3.5

—

Gate-Drain Charge

—

4.7

—

Turn-On Delay Time

—

9.7

—

nS

Turn-On Rise Time

—

17.1

—

Turn-Off Delay Time

—

60.5

—

Turn-Off Fall Time

—

40.4

—

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.