DMP6050SSD datasheet(2/6 Pages) DIODES

2 / 6 page

DMP6050SSD

Document number: DS37454 Rev.1 - 2

2 of 6

www.diodes.com

October 2014

DMP6050SSD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-60

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = -10V

TC = +25°C

TC = +70°C

-11.3

-9.1

TA = +25°C

TA = +70°C

-4.8

-3.9

Pulsed Drain Current (10

μs pulse, duty cycle = 1%)

IDM

-32

Maximum Continuous Body Diode Forward Current (Note 6)

-2.8

Avalanche Current (Note 7) L = 0.1mH

IAS

-24.8

Avalanche Energy (Note 7) L = 0.1mH

EAS

30.8

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

1.2

TA = +70°C

0.9

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RJA

104

°C/W

t<10s

Total Power Dissipation (Note 6)

TA = +25°C

1.7

TA = +70°C

1.1

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 6)

RθJC

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

-60

—

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

-1

µA

VDS = -60V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

-1.0

—

-3.0

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance

RDS (ON)

Ω

VGS = -10V, ID = -5A

VGS = -4.5V, ID = -4A

Diode Forward Voltage

VSD

-0.7

-1.2

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

1293

VDS = -30V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

86.3

Reverse Transfer Capacitance

Crss

64.7

Gate Resistance

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = -4.5V)

11.9

VDS = -30V, ID = -5A

Total Gate Charge (VGS = -10V)

Gate-Source Charge

Qgs

3.6

Gate-Drain Charge

Qgd

5.7

Turn-On Delay Time

tD(on)

4.3

VGS = -10V, VDS = -30V,

RG = 3Ω, ID = -5A

Turn-On Rise Time

6.3

Turn-Off Delay Time

tD(off)

46.7

Turn-Off Fall Time

25.3

Body Diode Reverse Recovery Time

trr

—



13.6

—



IF = -5A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

Qrr

—



7.4

—



IF = -5A, di/dt = 100A/μs

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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