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ESDA6V1-5W6 Datasheet(PDF) 5 Page - STMicroelectronics |
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ESDA6V1-5W6 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 9 page ![]() ESDA6V1-5W6 5/9 To have a good approximation of the remaining voltages at both Vi/o side, we provide the typical dynamical resistance value Rd. By taking into account the following hypothesis : Rg > Rd and Rload > Rd we have: Vin V R V R br d g g =+ × The results of the calculation done for Vg = 8 kV, Rg = 330 Ω (IEC 61000-4-2 standard), Vbr = 6.4 V (typ.) and Rd = 0.61 Ω (typ.) give: Vouput = 21.2 V This confirms the very low remaining voltage across the device to be protected. It is also important to note that in this approximation the parasitic inductance effect was not taken into account. This could be a few tenths of volts during a few ns at the Vi/o side. TEST BOARD ESD SURGE 16kV Air Discharge Vi/o E62 Fig. A2: Measurement conditions: |
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