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IRLL3303 Datasheet(PDF) 2 Page - International Rectifier |
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IRLL3303 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRLL3303 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.034 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.031 VGS = 10V, ID = 4.6A ––– ––– 0.045 VGS = 4.5V, ID = 2.3A VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 5.5 ––– ––– S VDS = 10V, ID = 2.3A ––– ––– 25 VDS = 30V, VGS = 0V ––– ––– 250 VDS = 24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -16V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 16V Qg Total Gate Charge ––– 34 50 ID = 4.6A Qgs Gate-to-Source Charge ––– 4.4 6.5 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– 10 16 VGS = 10V, See Fig. 6 and 9 td(on) Turn-On Delay Time ––– 7.2 ––– VDD = 15V tr Rise Time ––– 22 ––– ID = 4.6A td(off) Turn-Off Delay Time ––– 33 ––– RG = 6.2Ω tf Fall Time ––– 28 ––– RD = 3.2Ω, See Fig. 10 Ciss Input Capacitance ––– 840 ––– VGS = 0V Coss Output Capacitance ––– 340 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 4.6A, VGS = 0V trr Reverse Recovery Time ––– 65 98 ns TJ = 25°C, IF = 4.6A Qrr Reverse RecoveryCharge ––– 160 240 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics A 37 0.91 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 4.6A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: VDD = 15V, starting TJ = 25°C, L = 13mH RG = 25Ω, IAS = 4.6A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. Rev. # Parameters Old spec. New spec. Comments Revision Date 1VGS(th) (Max.) 2.5V No spec. Removed VGS(th) (Max). Specification 11/1/96 1VGS (Max.) ±20 ±16 Decrease VGS (Max). Specification 11/1/96 Specification changes |
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