P4C1024 datasheet(6/8 Pages) PYRAMID

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P4C1024

Page 6 of 14

Document # SRAM124 REV A

AC CHARACTERISTICS—WRITE CYCLE

CC = 5V ± 10%, All Temperature Ranges)

(2)

Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max Min Max

tWC

Write Cycle Time 15

100

120

tCW

Chip Enable

Time to End of

Write

tAW

Address Valid to

End of Write

100

tAS

Address Set-up

Time

000

tWP

Write Pulse

Width

tAH

Address Hold

Time

000

tDW

Data Valid to

End of Write

tDH

Date Hold Time

000

tWZ

Write Enable to

Output in High Z

101115

1820

2530

4050

tOW

Output Active

from End of

Write

333

Symbol

Parameter

-15

-20

-25

-35

-45

Unit

-55

-70

-85

-100

-120

Notes:

11. CE

1 and WE must be LOW, and CE2 HIGH for WRITE cycle.

12. OE is LOW for this WRITE cycle to show t

WZ and tOW.

13. If CE

1 goes HIGH, or CE2 goes LOW, simultaneously with WE HIGH,

the output remains in a high impedance state.

14. Write Cycle Time is measured from the last valid address to the first

transitioning address.

TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE

WE CONTROLLED)(11)

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