P4C1024 datasheet(3/8 Pages) PYRAMID

Part #	P4C1024

Description	HIGH SPEED 128K X 8 CMOS STATIC RAM

PDF	8 Pages

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Manufacturer	PYRAMID [Pyramid Semiconductor Corporation]

Direct Link	http://www.pyramidsemiconductor.com

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3 / 8 page

P4C1024

Page 3 of 14

Document # SRAM124 REV A

DATA RETENTION CHARACTERISTICS (P4C1024L, Military Temperature Only)

Typ.*

Max

Symbol

Parameter

Test Condition

Min

CC=VCC=Unit

2.0V

3.0V

2.0V

3.0V

CC for Data Retention

2.0

CCDR

Data Retention Current

200

400

600

µA

CDR

Chip Deselect to

Data Retention Time

†

Operation Recovery Time

A = +25°C

§t

RC = Read Cycle Time

†This parameter is guaranteed but not tested.

CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE1 = VIL, CE2 = VIH, OE = VIH

POWER DISSIPATION CHARACTERISTICS VS. SPEED

DATA RETENTION WAVEFORM

1 ≥ VCC – 0.2V or

2 ≤ 0.2V, VIN ≥ VCC – 0.2V

or V

IN ≤ 0.2V

Symbol

Parameter

Temperature

Range

-15

-20

-25

-35

-45

-55

-70

-85 -100 -120

Unit

Commercial

190 160 150 145 N/A N/A N/A N/A N/A N/A

Industrial

N/A 175 165 160 155 N/A N/A N/A N/A N/A

Military

N/A 150 140 135 130 125 115 110 105 100

Dynamic Operating Current*

ICC

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