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LP5900TL-2.2/NOPB Datasheet(PDF) 4 Page - Texas Instruments

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Part # LP5900TL-2.2/NOPB
Description  LP5900 150-mA Ultra-Low-Noise LDO for RF and Analog Circuits - Requires No Bypass Capacitor
PDF  30 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LP5900TL-2.2/NOPB Datasheet(HTML) 4 Page - Texas Instruments

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LP5900
SNVS358R – JULY 2005 – REVISED JUNE 2016
www.ti.com
Product Folder Links: LP5900
Submit Documentation Feedback
Copyright © 2005–2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltages are with respect to the potential at the GND pin.
(3)
If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(4)
Internal thermal shutdown circuitry protects the device from permanent damage.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1) (2) (3)
MIN
MAX
UNIT
Input voltage, VIN
–0.3
6
V
Output voltage, VOUT
–0.3
VIN + 0.3
Enable input voltage, VEN
–0.3
VIN + 0.3
Continuous power dissipation(4)
Internally Limited
Junction temperature, TJMAX
150
°C
Storage temperature, Tstg
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
(1)
All voltages are with respect to the potential at the GND pin.
(2)
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may
have to be derated. Maximum ambient temperature (TA-MAX) is dependent on the maximum operating junction temperature (TJ-MAX-OP =
125°C), the maximum power dissipation of the device in the application (PD-MAX), and the junction-to ambient thermal resistance of the
part/package in the application (RθJA), as given by the following equation: TA-MAX = TJ-MAX-OP – (RθJA × PD-MAX). See Application and
Implementation.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Input voltage, VIN
2.5
5.5
V
Enable voltage, VEN
0
VIN + 0.3
V
Output current, IOUT
(2)
0
150
mA
Junction temperature, TJ
–40
125
°C
Ambient temperature, TA
(2)
–40
85
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.4 Thermal Information
THERMAL METRIC(1)
LP5900
UNIT
NGF
YZR/YPF
6 PINS
4 PINS
RθJA
Junction-to-ambient thermal resistance
79.8
177.7
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
84.4
0.7
°C/W
RθJB
Junction-to-board thermal resistance
20.4
35.6
°C/W
ψJT
Junction-to-top characterization parameter
2.6
5.8
°C/W
ψJB
Junction-to-board characterization parameter
20.3
35.3
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
11.2
—
°C/W



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