MS34N02 datasheet(2/7 Pages) BWTECH

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MS34N02

30V(D-S) N-Channel Enhancement Mode Power MOSFET

Publication Order Number: [MS34N02]

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

MSN3402

SOT-23

Ø 180mm

8 mm

3000 units

Absolute Maximum Ratings (TA=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

±12

Drain Current-Continuous

IDM

Drain Current-Pulsed (Note 1)

Maximum Power Dissipation

0.9

TJ/TSTG

Operating Junction and Storage Temperature Range

-55 to +150

°C

Thermal Characteristic

Symbol

Parameter

Maximum

Units

RθJA

Thermal Resistance,Junction-to-Ambient (Note 2)

138

°C/W

Electrical Characteristics (TA=25°C unless otherwise noted)

Off Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VDS = 0 V, ID = 250μA

IGSS

Gate-Body Leakage

VDS = 0 V , VGS = ±20 V

±100

IDSS

Zero Gate Voltage Drain Current

VDS = 20 V , VGS = 0 V

μA

On Characteristics (Note 3)

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = -250μA

1.5

3.0

RDS(on)

Drain-Source On-Resistance

VGS = 10 V, ID = 3 A

VGS = 4.5 V, ID = 3 A

gfs

Forward Tranconductance

VDS = 5 V, ID = 3 A

Dynamic Characteristics (Note4)

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

CISS

Input Capacitance

VDS = 10 V

f = 1 MHz , VGS = 0 V

235

COSS

Output Capacitance

CRSS

Reverse Transfer Capacitance

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