MS34N02 datasheet(3/7 Pages) BWTECH

Part #	MS34N02

Description	30V(D-S) N-Channel Enhancement Mode Power MOSFET

PDF	7 Pages

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Manufacturer	BWTECH [Bruckewell Technology LTD]

Direct Link	http://www.bruckewell-semi.com

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MS34N02

30V(D-S) N-Channel Enhancement Mode Power MOSFET

Publication Order Number: [MS34N02]

Switching Characteristics (Note 4)

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

td(on)

Turn-on Delay Time

VDD = 15 V , ID = 1 A

VGS= 10 V , RGEN = 6 Ω

3.5

Turn-on Rise Time

1.5

td(off)

Turn-Off Delay Time

17.5

Turn-Off Fall Time

2.5

Total Gate Charge

VDS = 15 V , ID = 3 A,

VGS = 10 V

Qgs

Gate-Source Charge

0.95

Qgd

Gate-Drain Charge

1.6

Drain-Source Diode Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VSD

Diode Forward Voltage (Note 3)

VGS = 0 V , IS = 3 A

-1.2

Diode Forward Current (Note 2)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

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