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MSN6510F Datasheet(PDF) 1 Page - MORE Semiconductor Company Limited

Part # MSN6510F
Description  650V(D-S) N-Channel Enhancement Mode Power MOS FET
PDF  5 Pages
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Manufacturer  MORESEMI [MORE Semiconductor Company Limited]
Direct Link  http://www.moresemi.com/
Logo MORESEMI - MORE Semiconductor Company Limited

MSN6510F Datasheet(HTML) 1 Page - MORE Semiconductor Company Limited

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General Features
● VDS =650V,ID =10A
RDS(ON) <0.95 Ω @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
TO-220F-3L
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage
VGS
±30
V
Drain Current-Continuous
ID
10
A
Drain Current-Continuous(TC=100℃)
ID (100℃)
6
A
Pulsed Drain Current
IDM
40
A
Maximum Power Dissipation
PD
W
Derating factor
0.4
W/℃
Single pulse avalanche energy
(Note 5)
EAS
700
mJ
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 155
℃
MORE Semiconductor Company Limited
http://www.moresemi.com
1/5
MSN6510F
650V(D-S) N-Channel Enhancement Mode Power MOS FET
MSN6510F
MSN6510F
Lead Free
PIN Configuration
60
Schematic diagram
Marking and pin assignment
TO-220F top view


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