Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t

≤ 10 sec.

3. Pulse Test: Pulse Width

≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

MORE Semiconductor Company Limited

http://www.moresemi.com

2/5

MSN6510F

Thermal Characteristic

Thermal Resistance,Junction-to-Case

(Note 2)

2.5

/W

℃

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

650

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

3

4.5

V

Drain-Source On-State Resistance

-

0.95

Ω

Forward Transconductance

8.2

-

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

1610

-

PF

Output Capacitance

-

156

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

20

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

65

-

nS

Turn-on Rise Time

-

105

-

nS

Turn-Off Delay Time

-

210

-

nS

Turn-Off Fall Time

-

85

-

nS

Total Gate Charge

-

34

nC

Gate-Source Charge

-

6.5

nC

Gate-Drain Charge

-

12

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

1.4

V

Diode Forward Current

(Note 2)

-

-

10.0

A

Reverse Recovery Time

-

425

nS

Reverse Recovery Charge

Qrr

TJ = 25°C, IF = 10.0A

di/dt = 100A/

μs

(Note3)

-

4.31

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

C

μ

-

-

-

-

-

-

-

-

-