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TA2153FN Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # TA2153FN
Description  RF Amplifier for Digital Servo CD System
PDF  9 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TA2153FN Datasheet(HTML) 4 Page - Toshiba Semiconductor

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TA2153FN
2003-01-18
4
Pin No.
Symbol
I/O
Function Description
Remarks
22
RFCT
O
RFRP signal center level output terminal.
¾
23
PKC
I
Time constant adjustment terminal for peak detection.
Adjusted by capacitance.
24
RFRPIN
I
Input terminal for track count signal output amp.
¾
25
RFGO
O
Output terminal for RF signal amplitude adjustment amp.
¾
26
GVSW
I
Amp (AGC, FE, TE) gain switching terminal.
GVSW
Mode
GND
CD-RW
HiZ
Normal
VCC
Normal
Low (GND) is for 5 times
gain.
27
AGCIN
I
Input terminal for RF signal amplitude adjustment amp.
Connected to RFO through
capacitance.
28
RFO
O
Output terminal for RF signal amp.
¾
29
GND
¾
Ground terminal.
¾
30
RFN2
I
Input terminal for RF signal amp.
Connected to pin-diode
output A
+ B + C + D
(through resistor).
Note 1: Pin3 (GMAD) is gm adjustment terminal for AGC amp by applying a voltage (between 1.5 V and 4.2 V).
If pin3 (GMAD) is open, voltage of this terminal is fixed VR by IC interior.
Characteristic of frequency (open-loop characteristic) and voltage is as below.
Note 2: Current is changed by pin3 (GMAD) voltage.
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Power supply voltage
VCC
8
V
Power dissipation
PD
500
mW
Operating temperature
Topr
-40~85
°C
Storage temperature
Tstg
-55~150
°C
Gain
Frequency
GMAD Terminal Voltage
1.5 V
4.2 V
By changing a voltage (pin3) between 1.5 V and 4.2 V,
frequency band width is changed.
3
VCC
VR
GMAD
(Note2)
VR



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