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TA2153FN Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TA2153FN Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 9 page ![]() TA2153FN 2003-01-18 4 Pin No. Symbol I/O Function Description Remarks 22 RFCT O RFRP signal center level output terminal. ¾ 23 PKC I Time constant adjustment terminal for peak detection. Adjusted by capacitance. 24 RFRPIN I Input terminal for track count signal output amp. ¾ 25 RFGO O Output terminal for RF signal amplitude adjustment amp. ¾ 26 GVSW I Amp (AGC, FE, TE) gain switching terminal. GVSW Mode GND CD-RW HiZ Normal VCC Normal Low (GND) is for 5 times gain. 27 AGCIN I Input terminal for RF signal amplitude adjustment amp. Connected to RFO through capacitance. 28 RFO O Output terminal for RF signal amp. ¾ 29 GND ¾ Ground terminal. ¾ 30 RFN2 I Input terminal for RF signal amp. Connected to pin-diode output A + B + C + D (through resistor). Note 1: Pin3 (GMAD) is gm adjustment terminal for AGC amp by applying a voltage (between 1.5 V and 4.2 V). If pin3 (GMAD) is open, voltage of this terminal is fixed VR by IC interior. Characteristic of frequency (open-loop characteristic) and voltage is as below. Note 2: Current is changed by pin3 (GMAD) voltage. Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Power supply voltage VCC 8 V Power dissipation PD 500 mW Operating temperature Topr -40~85 °C Storage temperature Tstg -55~150 °C Gain Frequency GMAD Terminal Voltage 1.5 V 4.2 V By changing a voltage (pin3) between 1.5 V and 4.2 V, frequency band width is changed. 3 VCC VR GMAD (Note2) VR |
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