Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

0.1

1

10

100

1000

0.00001

0.0001

0.001

0.01

0.1

1

10

100

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

1

2

J

DM

thJA

A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

1

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Peak Diode Recovery dv/dt Test Circuit

+

-

+

+

+

-

-

-

ƒ

„

‚

• D.U.T. - Device Under Test

D.U.T

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



** Use P-Channel Driver for P-Channel Measurements

*

**

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

Driver Gate Drive

Inductor Curent

D =

P.W.

Period

[ ]

[ ]

[

] ***

Fig 13. For P-Channel HEXFETS

Page:P4 -P4

Plastic-Encapsulate Mosfets

GUANGDONG

HOTTECH

INDUSTRIAL

CO., LTD.

IRLML5103