IRLML5103 datasheet(3/4 Pages) HOTTECH

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Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

120

140

100

-V

, Drain-to-Source Voltage (V)

= 0V,

f = 1MHz

= C

+ C

, C

SHORTED

= C

+ C

iss

rss

oss

Ciss

Coss

Crss

0.0

1.0

2.0

3.0

4.0

5.0

Q , Total Gate Charge (nC)

= -24V

= -15V

FOR TEST CIRCUIT

SEE FIGURE 9

I = -0.60A

0.1

0.4

0.6

0.8

1.0

1.2

1.4

1.6

T = 25°C

T = 150°C

= 0V

-V

, Source-to-Drain Voltage (V)

0.1

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

= 25°C

= 150°C

Single Pulse

-V

, Drain-to-Source Voltage (V)

100µs

1ms

10ms

VDS

90%

10%

VGS

td(on)

td(off) tf

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

VDS

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

VDD

D.U.T.

Fig 9a. Basic Gate Charge Waveform

QGS

QGD

Charge

Fig 9b. Gate Charge Test Circuit

-10V

D.U.T.

VDS

-3mA

VGS

µF

50K

Ω

µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

Page:P4 -P3

Plastic-Encapsulate Mosfets

GUANGDONG

HOTTECH

INDUSTRIAL

CO., LTD.

IRLML5103

IRLML5103 Datasheet(PDF) 3 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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