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IRLML6401 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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IRLML6401 Datasheet(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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1 / 4 page  Marking: 1F Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 75 100 °C/W Power MOSFET Thermal Resistance VDSS = -12V RDS(on) = 0.05Ω l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) l Available in Tape and Reel l Fast Switching l 1.8V Gate Rated l Lead-Free l Halogen-Free Parameter Max. Units VDS Drain- Source Voltage -12 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -4.3 ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -3.4 A IDM Pulsed Drain Current -34 PD @TA = 25°C Power Dissipation 1.3 PD @TA = 70°C Power Dissipation 0.8 Linear Derating Factor 0.01 W/°C EAS Single Pulse Avalanche Energy 33 mJ VGS Gate-to-Source Voltage ± 8.0 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Absolute Maximum Ratings W 6 * ' Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.007 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.050 VGS = -4.5V, ID = -4.3A RDS(on) Static Drain-to-Source On-Resistance ––– 0.085 VGS = -2.5V, ID = -2.5A ––– 0.125 VGS = -1.8V, ID = -2.0A VGS(th) Gate Threshold Voltage -0.40 -0.55 -0.95 V VDS = VGS, ID = -250µA gfs Forward Transconductance 8.6 ––– ––– S VDS = -10V, ID = -4.3A ––– ––– -1.0 VDS = -12V, VGS = 0V ––– ––– -25 VDS = -9.6V, VGS = 0V, TJ = 55°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -8.0V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 8.0V Qg Total Gate Charge ––– 10 15 ID = -4.3A Qgs Gate-to-Source Charge ––– 1.4 2.1 nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 2.6 3.9 VGS = -5.0V td(on) Turn-On Delay Time ––– 11 ––– VDD = -6.0V tr Rise Time ––– 32 ––– ID = -1.0A td(off) Turn-Off Delay Time ––– 250 ––– RD = 6.0Ω tf Fall Time ––– 210 ––– RG = 89Ω Ciss Input Capacitance ––– 830 ––– VGS = 0V Coss Output Capacitance ––– 180 ––– pF VDS = -10V Crss Reverse Transfer Capacitance ––– 125 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω IDSS Drain-to-Source Leakage Current nA ns Page:P4 -P1 Plastic-Encapsulate Mosfets GUANGDONG HOTTECH INDUSTRIAL CO., LTD. IRLML6401 l |
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