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NCP3235 Datasheet(PDF) 5 Page - ON Semiconductor |
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NCP3235 Datasheet(HTML) 5 Page - ON Semiconductor |
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5 / 16 page ![]() NCP3235 www.onsemi.com 5 Table 4. ELECTRICAL CHARACTERISTICS (−40 °C < TJ < +125°C, VCC = 12 V, for min/max values unless otherwise noted, TJ = +25°C for typical values) Parameter Symbol Test Conditions Min Typ Max Units POWER SUPPLY VIN/VCC Operation Voltage VIN/VCC 4.5 21 V VB UVLO Threshold (Rising) 4.2 4.3 4.4 V VB UVLO Threshold (Falling) 3.8 3.95 4.0 V VB Output Voltage VB VCC = 6 V, 0 ≤ IB ≤ 40 mA 4.86 5.15 5.45 V VB Dropout voltage IB = 25 mA, VCC = 4.5 V 65 120 mV VCC Quiescent Current EN=H, COMP=H, no switching; PG open; no switching 4.7 6.4 mA Shutdown Supply Current EN=0; Vcc=21 V; PG open 100 140 mA EN=0; Vcc=4.5; PG open 75 85 mA FEEDBACK VOLTAGE FB input voltage VFB TJ = 25 °C, 4.5 V ≤ VCC ≤ 21 V 597 600 603 mV −40 °C ≤ TJ ≤ 125°C; 4.5 V ≤ VCC ≤ 21 V 594 600 606 Feedback Input Bias Current IFB VFB = 0.6 V 75 nA ERROR AMPLIFIER Open Loop DC Gain (GBD) 60 85 dB Open Loop Unity Gain Bandwidth F0dB,EA 24 MHz Open Loop Phase Margin 60 deg Slew Rate COMP pin to GND = 10 pF 2.5 V/ m COMP Clamp Voltage, High 3.3 V COMP Clamp Voltage, Low 0.57 V Output Source Current VFB = 0.55 V 15 mA Output Sink Current VFB = 1 V 20 mA CURRENT LIMIT Low−side RDS(on)/ISET RDS(on)/ ISET Guaranteed by characterization, TJ = 25°C 108 W/A Low−side ISET Current Source Temperature Coefficient TC_LS_ISET +0.33 %/ °C Low−side OCP switch−over threshold Guaranteed by design 600 mV Low−side Fixed OCP threshold LS_OCPth Guaranteed by design 600 mV Low−side programmable OCP range Guaranteed by design <600 mV LS OCP Blanking time LS_Tblnk Guaranteed by design 150 ns PWM Maximum duty cycle fsw = 550 kHz, 4.5 V < VCC < 21 V 87 % fsw = 1.1 MHz, 4.5 V < VCC < 21 V 76 Minimum duty cycle VCOMP < PWM Ramp Offset Voltage 0 % Minimum GH on−time Guaranteed by design 35 ns PWM Ramp Amplitude Guaranteed by characterization VCC/7.9 VCC/6.5 VCC/5.6 V PWM Ramp Offset 0.67 V |
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