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TC55VCM208ASTN40 Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part # TC55VCM208ASTN40
Description  524,288-WORD BY 8-BIT FULL CMOS STATIC RAM
PDF  12 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC55VCM208ASTN40 Datasheet(HTML) 4 Page - Toshiba Semiconductor

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TC55VCM208ASTN40,55
2003-08-11
4/12
AC CHARACTERISTICS AND OPERATING CONDITIONS
(Ta
= −40° to 85°C, VDD = 2.7 to 3.6 V)
READ CYCLE
TC55VCM208ASTN
40
55
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNIT
tRC
Read Cycle Time
40
55
tACC
Address Access Time
40
55
tCO1
Chip Enable(
1
CE ) Access Time
40
55
tCO2
Chip Enable(CE2) Access Time
40
55
tOE
Output Enable Access Time
25
30
tCOE
Chip Enable Low to Output Active
5
5
tOEE
Output Enable Low to Output Active
0
0
tOD
Chip Enable High to Output High-Z
20
25
tODO
Output Enable High to Output High-Z
20
25
tOH
Output Data Hold Time
10
10
ns
WRITE CYCLE
TC55VCM208ASTN
40
55
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNIT
tWC
Write Cycle Time
40
55
tWP
Write Pulse Width
30
40
tCW
Chip Enable to End of Write
35
45
tAS
Address Setup Time
0
0
tWR
Write Recovery Time
0
0
tODW
R/W Low to Output High-Z
20
25
tOEW
R/W High to Output Active
0
0
tDS
Data Setup Time
20
25
tDH
Data Hold Time
0
0
ns
Note:
tOD, tODO and tODW are specified in time when an output becomes high impedance, and are not judged depending on an
output voltage level.



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