TC55VCM208ASTN40 datasheet(3/12 Pages) TOSHIBA

3 / 12 page

TC55VCM208ASTN40,55

2003-08-11

3/12

DC RECOMMENDED OPERATING CONDITIONS (Ta

= −40° to 85°C)

SYMBOL

PARAMETER

MIN

TYP

MAX

UNIT

VDD

Power Supply Voltage

2.3



3.6

VDD = 2.3 V~2.7 V

2.0

VIH

Input High Voltage

VDD = 2.7 V~3.6 V

2.2



VDD + 0.3

VIL

Input Low Voltage

−0.3*



VDD × 0.24

VDH

Data Retention Supply Voltage

1.5



3.6

−2.0 V when measured at a pulse width of 20ns

DC CHARACTERISTICS (Ta

= −40° to 85°C, VDD = 2.3 to 3.6 V)

SYMBOL

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

IIL

Input Leakage

Current

VIN = 0 V~VDD



±1.0

µA

IOH

Output High Current VOH = VDD − 0.5 V

−0.5



IOL

Output Low Current

VOL = 0.4 V

2.1



ILO

Output Leakage

Current

= VIH or CE2 = VIL or R/W = VIL or OE = VIH,

VOUT = 0 V~VDD



±1.0

µA

MIN



IDDO1

= VIL and CE2 = VIH and

R/W

= VIH, IOUT = 0 mA,

Other Input

= VIH/VIL

µs



MIN



IDDO2

Operating Current

= 0.2 V and

CE2

= VDD − 0.2 V and

R/W

= VDD − 0.2 V,

IOUT = 0 mA,

Other Input

= VDD − 0.2 V/0.2 V

tcycle

µs



IDDS1

= VIH or CE2 = VIL



VDD =

3.3V

± 0.3 V

= −40~85°C



= 25°C



0.7



= −40~40°C



IDDS2

Standby Current

= VDD − 0.2 V or

CE2

= 0.2 V

VDD =3.0 V

= −40~85°C



µA

CAPACITANCE (Ta

= 25°C, f = 1 MHz)

SYMBOL

PARAMETER

TEST CONDITION

MAX

UNIT

CIN

Input Capacitance

VIN = GND

COUT

Output Capacitance

VOUT = GND

Note:

This parameter is periodically sampled and is not 100% tested.

TC55VCM208ASTN40 Datasheet(PDF) 3 Page - Toshiba Semiconductor

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