TPC8403 datasheet(1/11 Pages) TOSHIBA

Part #	TPC8403

Description	Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)

PDF	11 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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TPC8403

2004-07-06

1

TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type

(P Channel U-MOSII/N Channel U-MOSII)

TPC8403

Motor Drive Applications

Notebook PC Applications

Portable Equipment Applications

• Low drain-source ON resistance: P Channel RDS (ON) = 45 mΩ (typ.)

N Channel RDS (ON) = 25 mΩ (typ.)

• High forward transfer admittance: P Channel |Yfs| = 6.2 S (typ.)

N Channel |Yfs| = 7.8 S (typ.)

• Low leakage current:

P Channel IDSS = −10 µA (VDS = −30 V)

N Channel IDSS = 10 µA (VDS = 30 V)

• Enhancement mode

: P Channel Vth = −1.0~−2.2 V (VDS = −10 V, ID = −1 mA)

: N Channel Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta

= 25°C)

Rating

Characteristics

Symbol

P Channel N Channel

Unit

Drain-source voltage

VDSS

−30

30

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

−30

30

V

Gate-source voltage

VGSS

±20

V

DC

(Note 1)

ID

−4.5

6

Drain current

Pulse

(Note 1)

IDP

−18

24

A

Single-device operation

(Note 3a)

PD(1)

1.5

Drain power

dissipation

(t

= 10s)

(Note 2a)

Single-device value at

dual operation (Note 3b)

PD(2)

1.1

Single-device operation

(Note 3a)

PD(1)

0.75

Drain power

dissipation

(t

= 10s)

(Note 2b)

Single-device value at

dual operation (Note 3b)

PD(2)

0.45

W

Single pulse avalanche energy

EAS

26.3

(Note 4a)

46.8

(Note 4b)

mJ

Avalanche current

IAR

−4.5

6

A

Repetitive avalanche energy

Single-device value at operation

(Note 2a, 3b, 5)

EAR

0.11

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55~150

°C

Note 1, Note 2ab, Note 3ab, Note 4and Note 5: See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1E

Weight: 0.080 g (typ.)

Circuit Configuration

8

7

6

5

1

2

3

4

N-ch

P-ch

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