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MTCH102-E/ML Datasheet(PDF) 11 Page - Microchip Technology |
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MTCH102-E/ML Datasheet(HTML) 11 Page - Microchip Technology |
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11 / 37 page ![]() 2015-2016 Microchip Technology Inc. Preliminary DS40001793C-page 11 MTCH102/5/8 5.0 ELECTRICAL SPECIFICATIONS Absolute Maximum Ratings(†) Ambient temperature under bias....................................................................................................... -40°C to +125°C Storage temperature ........................................................................................................................ -65°C to +150°C Voltage on pins with respect to VSS on VDD pin ................................................................................................................................ -0.3V to +4.0V on all other pins ............................................................................................................. -0.3V to (VDD + 0.3V) Total power dissipation(1) ............................................................................................................................... 800 mW Maximum current out of VSS pin -40°C TA +85°C for industrial.......................................................................................................... 85 mA into VDD pin -40°C TA +85°C for industrial .......................................................................................................... 80 mA Clamp current, IK (VPIN < 0 or VPIN > VDD) 20 mA Maximum output current sunk by any I/O pin................................................................................................................................ 25 mA sourced by any I/O pin........................................................................................................................... 25 mA Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD – IOH} + {(VDD – VOH) x IOH} + (VOl x IOL). † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. 5.1 DC Characteristics: MTCH102/5/8 MTCH102/5/8 Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≥ +85°C for industrial Param. No. Sym. Characteristic Min. Typ.† Max. Units Conditions D001 VDD Supply Voltage 2.05 — 3.6 V D002* VDR RAM Data Retention Voltage (1) 1.5 — — V Device in Sleep mode VPOR* Power-on Reset Release Volt- age —1.6 — V VPORR* Power-on Reset Rearm Voltage — 0.8 — V Device in Sleep mode D004* SVDD VDD Rise Rate to ensure internal Power-on Reset signal 0.05 — — V/ms * These parameters are characterized but not tested. † Data in “Typ.” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: This is the limit to which VDD can be lowered in Sleep mode without losing RAM data. |
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