DMC4050SSDQ

Document number: DS38781 Rev. 1 - 2

2 of 12

www.diodes.com

April 2016

© Diodes Incorporated

DMC4050SSDQ

Marking Information

Characteristic

Symbol

N-Channel - Q1

P-Channel - Q2

Units

Drain-Source Voltage

40

-40

V

Gate-Source Voltage

20

20

Continuous Drain Current

(Notes 7 & 9)

5.8

-5.8

A

4.38

-4.52

(Notes 6 & 9)

4.2

-4.2

(Notes 6 & 10)

5.3

-5.3

Pulsed Drain Current

(Notes 8 & 9)

24.1

-24.9

Continuous Source Current (Body Diode)

(Notes 7 & 9)

2.5

-2.5

Pulsed Source Current (Body Diode)

(Notes 8 & 9)

24.1

-24.9

Thermal Characteristics

Characteristic

Symbol

N-Channel - Q1

P-Channel - Q2

Unit

Power Dissipation

Linear Derating Factor

(Notes 6 & 9)

1.25

10

W

(Notes 6 & 10)

1.8

14.3

(Notes 7 & 9)

2.14

17.2

Thermal Resistance, Junction to Ambient

(Notes 6 & 9)

100

°C/W

(Notes 6 & 10)

70

(Notes 7 & 9)

58

Thermal Resistance, Junction to Lead

(Notes 6 & 11)

51

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

7. Same as Note (6), except the device is measured at t

 10 sec.

8. Same as Note (6), except the device is pulsed with D = 0.02 and pulse width 300µs.

9. For a dual device with one active die.

10. For a device with two active die running at equal power.

11. Thermal resistance from junction to solder-point (at the end of the drain lead).

C4050SD

YY WW

= Manufacturer’s Marking

C4050SD = Product Type Marking Code

YYWW = Date Code Marking

YY or YY= Year (ex: 16 = 2016)

WW = Week (01 - 53)