 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
DMC4050SSD Datasheet(PDF) 4 Page - Diodes Incorporated |
|
|
|||||||||||||||||||||||||||||
DMC4050SSD Datasheet(HTML) 4 Page - Diodes Incorporated |
|
|
4 / 12 page  DMC4050SSDQ Document number: DS38781 Rev. 1 - 2 4 of 12 www.diodes.com April 2016 © Diodes Incorporated DMC4050SSDQ Electrical Characteristics (Q1 N-Channel) (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 12) Drain-Source Breakdown Voltage BVDSS 40 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1.0 µA VDS = 40V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 12) Gate Threshold Voltage VGS(TH) 0.8 1.3 1.8 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 20 33 45 60 m Ω VGS = 10V, ID = 3A VGS = 4.5V, ID = 3A Forward Transfer Admittance |YFS| — 12.6 — S VDS = 5V, ID = 3A Diode Forward Voltage (Note 12) VSD — 0.7 1.0 V VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 13) Input Capacitance CISS — 1,790.8 — pF VDS = 20V, VGS = 0V, f = 1.0MHz Output Capacitance COSS — 160.6 — pF Reverse Transfer Capacitance CRSS — 120.5 — pF Gate Resistance RG — 1.03 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge QG — 37.56 — nC VGS = 10V, VDS = 20V, ID = 3A Gate-Source Charge QGS — 7.8 — nC Gate-Drain Charge QGD — 6.6 — nC Turn-On Delay Time tD(ON) — 8.08 — ns VGS = 10V, VDS = 20V, ID = 3A Turn-On Rise Time tR — 15.14 — ns Turn-Off Delay Time tD(OFF) — 24.29 — ns Turn-Off Fall Time tF — 5.27 — ns Electrical Characteristics (Q2 P-Channel) (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 12) Drain-Source Breakdown Voltage BVDSS -40 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1.0 μA VDS = -40V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 12) Gate Threshold Voltage VGS(TH) -0.8 -1.3 -1.8 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — 28 30 45 60 m Ω VGS = -10V, ID = -3A VGS = -4.5V, ID = -3A Forward Transfer Admittance |YFS| — 16.6 — S VDS = -5V, ID = -3A Diode Forward Voltage (Note 12) VSD — -0.7 -1.0 V VGS = 0V, IS = -1A DYNAMIC CHARACTERISTICS (Note 13) Input Capacitance CISS — 1,643.17 — pF VDS = -20V, VGS = 0V, f = 1.0MHz Output Capacitance COSS — 179.13 — pF Reverse Transfer Capacitance CRSS — 127.82 — pF Gate Resistance RG — 6.43 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge QG — 33.66 — nC VGS = -10V, VDS = -20V, ID = -3A Gate-Source Charge QGS — 5.54 — nC Gate-Drain Charge QGD — 7.30 — nC Turn-On Delay Time tD(ON) — 6.85 — ns VGS = -10V, VDS = -20V, ID = -3A Turn-On Rise Time tR — 14.72 — ns Turn-Off Delay Time tD(OFF) — 53.65 — ns Turn-Off Fall Time tF — 30.86 — ns Notes: 12. Short duration pulse test used to minimize self-heating effect. 13. Guaranteed by design. Not subject to production testing. |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
