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LR024N Datasheet(PDF) 1 Page - Infineon Technologies AG

Part # LR024N
Description  AUTOMOTIVE GRADE
PDF  11 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

LR024N Datasheet(HTML) 1 Page - Infineon Technologies AG

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AUIRLR024N
AUIRLU024N
VDSS
55V
RDS(on)
max.
0.065

ID
17A
Features
 Advanced Planar Technology
 Low On-Resistance
 Logic-Level Gate Drive
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this Cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
1
2015-10-29
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
 
AUTOMOTIVE GRADE
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
17
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
12
IDM
Pulsed Drain Current 
72
PD @TC = 25°C
Maximum Power Dissipation
45
W
Linear Derating Factor
0.3
W/°C
VGS
Gate-to-Source Voltage
± 16
V
EAS
Single Pulse Avalanche Energy (Thermally Limited) 
68
mJ
IAR
Avalanche Current 
11
A
EAR
Repetitive Avalanche Energy 
4.5
mJ
dv/dt
Peak Diode Recovery dv/dt 
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
 
TSTG
Storage Temperature Range
°C 
Soldering Temperature, for 10 seconds (1.6mm from case)
300
 
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance  
Symbol
Parameter
Typ.
Max.
Units
RJC
Junction-to-Case
–––
3.3
°C/W
RJA
Junction-to-Ambient ( PCB Mount) 
–––
50
RJA
Junction-to-Ambient
–––
110
D-Pak
AUIRLR024N
I-Pak
AUIRLU024N
Base part number
Package Type
Standard Pack
Form
Quantity
AUIRLU024N
I-Pak
Tube
75
AUIRLU024N
AUIRLR024N
D-Pak
Tube
75
AUIRLR024N
Tape and Reel Left
3000
AUIRLR024NTRL
Orderable Part Number
G
D
S
Gate
Drain
Source
G
S
D
D
S
G
D
HEXFET® Power MOSFET


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