8NP datasheet(1/7 Pages) CHONGQING

Part #	8NP

Description	8 Amps,100 Volts N-CHANNEL Power MOSFET

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Manufacturer	CHONGQING [Chongqing Pingwei Enterprise co.,Ltd]

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8N10P

8 Amps,100 Volts N-CHANNEL Power MOSFET

FEATURE



8A,100V,RDS(ON)MAX=23mΩVGS=10V/8A



Low gate charge



Low Ciss



Fast switching



100% avalanche tested



Improved dv/dt capability

APPLICATION



High Frequency Piont-of-Load Synchronous

Buck Converter for MB/NB/UMPC/VGA



Networking DC-DC Power System



LCD/LED back light

SOP8L PIN CONFIGURATION

GENERAL DESCRIPTION

The 8N10P is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and

gate charge for most of the synchronous buck converter applications.

The 8N10P meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved.

Absolute Maximum Ratings(TC=25℃,unless otherwise noted)

Parameter

Symbol

8N10P

UNIT

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±

20

Continuous Drain Current

ID

8

A

Pulsed Drain Current(Note1)

IDM

32

Single Pulse Avalanche Energy (Note 2)

EAS

11

mJ

Avalanche Current

IAS

15

A

Reverse Diode dV/dt (Note 3)

dv/dt

5.5

V/ns

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 to +150

℃

Channel Temperature

TCH

150

℃

Maximum lead temperature for soldering purposes,

1/8"from case for 5 seconds

TL

260

℃

Thermal Characteristics

Parameter

Symbol

MAX

Units

Thermal resistance , Channel to Case

Rth(ch-c)

16

℃

/W

Thermal resistance , Channel to Ambient

Rth(ch-a)

59

℃

/W

Maximum Power Dissipation

TC=25℃

PD

3.1

W

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