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8NP Datasheet(PDF) 2 Page - Chongqing Pingwei Enterprise co.,Ltd

Part # 8NP
Description  8 Amps,100 Volts N-CHANNEL Power MOSFET
PDF  7 Pages
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Manufacturer  CHONGQING [Chongqing Pingwei Enterprise co.,Ltd]
Direct Link  http://www.perfectway.cn
Logo CHONGQING - Chongqing Pingwei Enterprise co.,Ltd

8NP Datasheet(HTML) 2 Page - Chongqing Pingwei Enterprise co.,Ltd

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Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V,ID=250uA
100
－
－
V
Breakdown Temperature Coefficient
ΔBVDSS
/ΔTJ
Reference to 25℃，
ID=250uA
－
0.06
－
V/℃
Zero Gate Voltage Drain Current
IDSS
VDS=100VGS=0V
－
－
1
μ
A
IDSS
VDS=100VGS=0V（TJ =55℃）
－
－
5
μ
A
Gate-Body Leakage Current,Forward
IGSS
VGS=±20VDS=0V
－
－
±
100
nA
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
VDS=10V,ID=250uA
1.0
－
3.0
V
Drain-Source On-State Resistance
RDS(on)
VGS=10V,ID=8A
－
18.5
23
mΩ
Dynamic Characteristics
Input Capacitance
Ciss
VDS=50V,VGS=0V,
f=1.0MHZ
－
1190
－
pF
Output Capacitance
Coss
－
95
－
pF
Reverse Transfer Capacitance
Crss
－
7
－
pF
Switching Characteristics
Turn-On Delay Time
td(on)
VDD=50V,
R L=6.25Ω,
R GEN =3Ω
VGS=10V
(Note4,5)
－
7
－
ns
Turn-On Rise Time
tr
－
3
－
ns
Turn-Off Delay Time
td(off)
－
20
－
ns
Turn-Off Fall Time
tf
－
3
－
ns
Total Gate Charge
Qg
VDS=50V,ID=8A,
VGS=10V, (Note4,5)
－
16
－
nC
Gate-Source Charge
Qgs
－
4.5
－
nC
Gate-Drain Charge
Qgd
－
2.5
－
nC
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
VG = VD= 0V, Force Current
－
－
8
A
Pulsed Diode Forward Current
ISM
－
－
32
A
Diode Forward Voltage
VSD
IS=10A,VGS=0V
－
－
1.0
V
Notes
1.
Repetitive Rating:pulse width limited by maximum junction temperature.
2.
VDD=25V,L=0.1mH,Rg=25Ω,IAS=13A , starling TJ=25℃.
3.
ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃，Pulse width≤300us;duty cycle≤2%.
4.
Repetitive rating; pulse width limited by maximum junction temperature.



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