08P06P datasheet(1/9 Pages) INFINEON

Part #	08P06P

Description	SIPMOS짰 Power-Transistor

PDF	9 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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1 / 9 page

SPD08P06P

G

SIPMOS® Power-Transistor

Features

• P-Channel

• Enhancement mode

• Avalanche rated

• dv /dt rated

• 175°C operating temperature

• Pb-free lead finishing; RoHS compliant

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T A=25 °C

A

T A=100 °C

Pulsed drain current

I D,pulse

T A=25 °C

Avalanche energy, single pulse

E AS

I D=8.83 A, R GS=25 Ω

mJ

Avalanche energy, periodic limited by

Tjmax

E AR

4.2

Reverse diode dv /dt

dv /dt

I D=8.83 A, V DS=48 V,

di /dt =-200 A/µs,

T j,max=175 °C

kV/µs

Gate source voltage

V GS

V

Power dissipation

P tot

T A=25 °C

W

Operating and storage temperature

T j, T stg

°C

ESD class

Soldering temperature

IEC climatic category; DIN IEC 68-1

55/175/56

"-55 ... +175"

±20

-6

260 °C

-8.83

-6.25

42

Value

70

-35.32

steady state

V DS

-60

V

R DS(on),max

0.3

Ω

I D

-8.8

A

Product Summary

P

G-TO252-3

Type

Package

Tape and reel information

Marking

Lead free

Packing

SPD08P06P

G PG-TO252-3

Rev 1.

92

page 1

20

12-09-10

1000 pcs / reel

08P06P

Yes

° Qualified according to AEC Q101

Non dry

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