RSS050P03

Transistors

Rev.A

2/4

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Body diode characteristics (source-drain characteristics)

−−

−1.2

V

Forward voltage

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Min.

Typ.

Max.

Unit

Conditions

−−

±10

−15V

−30

−−

−−

−1

−1.0

−−2.5

V

−

30

42

−

47

65

m

Ω

m

Ω

m

Ω

−

55

77

5.0

−−

−

1200

−

pF

= −10V

−

250

180

−

pF

=0V

−

12

−

pF

f

=1MHz

−

25

−

ns

−

70

−

ns

−

35

−

ns

−

13

−

ns

−

2.8

−

nC

−

5.0

−

nC

= −5V

−−

nC

= −5.0A

−15V

= −2.5A

= −10V

=6Ω

=10Ω

∗Pulsed

∗

∗

∗

∗

∗

∗