RSS050P03

Transistors

Rev.A

1/4

Switching (

−30V, −5.0A)

RSS050P03

Features

1) Low On-resistance.

2) Built-in G-S Protection Diode.

3) Small and Surface Mount Package (SOP8).

Application

Power switching, DC / DC converter.

Structure

Silicon P-channel

MOS FET

External dimensions (Unit : mm)

Each lead has same dimensions

SOP8

3.9

6.0

0.4Min.

Packaging specifications

Package

Code

Taping

Basic ordering unit (pieces)

RSS050P03

TB

2500

Type

Absolute maximum ratings (Ta=25

°C)

∗1

∗1

∗2

Parameter

V

Symbol

−30

V

±20

A

±5.0

A

±20

A

−1.6

A

−20

W

2.0

°C

Tch

150

°C

Tstg

−55 to +150

Limits

Unit

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation

Channel temperature

Range of Storage temperature

Continuous

Pulsed

Continuous

Pulsed

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

Source current

(Body diode)

Equivalent circuit

(1) Source

(2) Source

(3) Source

(4) Gate

(5) Drain

(6 )Drain

(7) Drain

(8) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

∗2

∗1

(8)

(7)

(6)

(5)

(1)

(2)

(3)

(4)

Thermal resistance (Ta=25

°C)

°C / W

Rth (ch-a)

62.5

Parameter

Symbol

Limits

Unit

Channel to ambient

∗