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STM32F318C8 Datasheet(PDF) 73 Page - STMicroelectronics |
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STM32F318C8 Datasheet(HTML) 73 Page - STMicroelectronics |
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73 / 125 page ![]() DocID026294 Rev 5 73/125 STM32F318C8 STM32F318K8 Electrical characteristics 107 6.3.7 Internal clock source characteristics The parameters given in Table 38 are derived from tests performed under ambient temperature and supply voltage conditions summarized in Table 20. High-speed internal (HSI) RC oscillator Figure 17. HSI oscillator accuracy characterization results for soldered parts Table 38. HSI oscillator characteristics(1) 1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 8 - MHz TRIM HSI user trimming step - - - 1(2) 2. Guaranteed by design, not tested in production. % DuCy(HSI) Duty cycle - 45(2) -55(2) % ACCHSI Accuracy of the HSI oscillator TA = -40 to 105°C -2.8(3) 3. Data based on characterization results, not tested in production. -3.8(3) % TA = -10 to 85°C -1.9(3) -2.3(3) TA = 0 to 85°C -1.9(3) -2(3) TA = 0 to 70°C -1.3(3) -2(3) TA = 0 to 55°C -1(3) -2(3) TA = 25°C(4) 4. Factory calibrated, parts not soldered. -1 - 1 tsu(HSI) HSI oscillator startup time - 1(2) -2(2) µs IDDA(HSI) HSI oscillator power consumption - - 80 100(2) µA |
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