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C1210 Datasheet(PDF) 2 Page - IMP, Inc |
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C1210 Datasheet(HTML) 2 Page - IMP, Inc |
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2 / 4 page ![]() 48 C1210-4-98 Process C1210 Diffusion & Thin Films Symbol Minimum Typical Maximum Unit Comments Well (field) Sheet Resistance ρ N-well(f) 0.6 1.0 1.3 K Ω/ n-well N+ Sheet Resistance ρ N+ 20 35 50 Ω/ N+ Junction Depth xjN+ 0.35 µm P+ Sheet Resistance ρ P+ 50 75 100 Ω/ P+ Junction Depth xjP+ 0.35 µm Gate Oxide Thickness TGOX 24 nm Field Oxide Thickness TFIELD 800 nm Gate Poly Sheet Resistance ρ POLY2 15 22 30 Ω/ Bottom Poly Sheet Res. ρ POLY1 35 Ω/ Metal-1 Sheet Resistance ρ M1 50 m Ω/ Metal-2 Sheet Resistance ρ M2 30 m Ω/ Passivation Thickness TPASS 200+900 nm oxide+nit. Capacitance Symbol Minimum Typical Maximum Unit Comments Gate Oxide COX 1.28 1.38 1.58 fF/ µm2 Metal-1 to Poly-1 CM1P 0.057 fF/ µm2 Metal-1 to Silicon CM1S fF/ µm2 Metal-2 to Metal-1 CMM 0.035 fF/ µm2 Poly-1 to Poly-2 CP1P2 0.69 0.86 1.03 fF/ µm2 Electrical Characteristics |
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