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STV200N55F3 Datasheet(PDF) 1 Page - STMicroelectronics |
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STV200N55F3 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() March 2009 Rev 3 1/12 12 STV200N55F3 N-channel 55 V, 1.8 m Ω, 200 A, PowerSO-10 STripFET™ Power MOSFET Features ■ Conduction losses reduced ■ Low profile, very low parasitic inductance Application ■ Switching applications Description This n-channel enhancement mode Power MOSFET is the latest refinement of ST’s STripFET™ process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Figure 1. Internal schematic diagram and connection diagram (top view) Type VDSS RDS(on) max ID (1) 1. Current limited by package STV200N55F3 55 V < 2.5 m Ω 200 A 1 10 PowerSO-10 Table 1. Device summary Order code Marking Package Packaging STV200N55F3 200N55F3 PowerSO-10 Tape and reel www.st.com Obsolete Product(s) - Obsolete Product(s) |
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