STV200N55F3 datasheet(4/12 Pages) STMICROELECTRONICS

Part #	STV200N55F3

Description	N-channel 55 V, 1.8 mΩ, 200 A, PowerSO-10 STripFET™ Power MOSFET

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

4 / 12 page

Obsolete

Product(s)

- Obsolete

Product(s)

Electrical characteristics

STV200N55F3

4/12

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating,

VDS = Max rating, Tc = 125 °C

µA

IGSS

Gate body leakage

current (VDS = 0)

VDS = ± 20 V

±100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 75 A

1.8

2.5

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz, VGS =0

6800

1450

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 44 V, ID = 120 A,

VGS = 10 V

Figure 14

100

STV200N55F3 Datasheet(PDF) 4 Page - STMicroelectronics

STV200N55F3 Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL