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MRF9080LSR3 Datasheet(PDF) 2 Page - Motorola, Inc

Part # MRF9080LSR3
Description  RF POWER FIELD EFFECT TRANSISTORS
PDF  12 Pages
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MRF9080LSR3 Datasheet(HTML) 2 Page - Motorola, Inc

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MRF9080 MRF9080R3 MRF9080SR3 MRF9080LSR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vds, VGS = 0)
IDSS
—
—
1
µAdc
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0 )
IGSS
—
—
1
µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
VGS(th)
2.0
—
4.0
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 700 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.19
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
gfs
—
8.0
—
S
DYNAMIC CHARACTERISTICS (1)
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss
—
73
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
2.9
—
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2)
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
P1dB
68
75
—
W
Common–Source Amplifier Power Gain @ 70 W (Min)
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
Gps
17
18.5
20
dB
Drain Efficiency @ Pout = 70 W
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
η1
47
52
—
%
Drain Efficiency @ P1dB
(VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz)
η2
—
55
—
%
Input Return Loss
(VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 921 and 960 MHz)
IRL
9.5
12.5
—
dB
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 600 mA,
f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally input matched.
(2) To meet application requirements, Motorola test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency



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