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2SD693 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2SD693
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD693 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Darlington Power Transistor
2SD693
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 50mA; IB= 0
450
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
450
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
10
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 5A; IB= 10mA
1.8
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 8A; IB= 40mA
2.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 5A; IB= 10mA
2.0
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 8A; IB= 40mA
2.2
V
ICBO
Collector Cutoff Current
VCB=450V; IE=0
0.1
mA
ICEO
Collector Cutoff Current
VCE= 450V;IB= 0
0.5
mA
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
10
mA
hFE
DC Current Gain
IC= 5A; VCE= 5V
150



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