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2SD693 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD693 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor 2SD693 DESCRIPTION · Collector-Emitter Sustaining Voltage- VCEO(SUS)= 450V(Min) · High Power Dissipation · Low Collector Saturation Voltage · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for line operated switchmode applications such as: · Switching regulators · Inverters · Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 10 V IC Collector Current 10 A ICM Collector Current-peak 15 A IB Base Current 1 A PC Collector Power Dissipation @TC=25℃ 80 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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