© Semiconductor Components Industries, LLC, 1994

October, 2016 − Rev. 6

1

Publication Order Number:

MMBT5088LT1/D

MMBT5088L, MMBT5089L

Low Noise Transistors

NPN Silicon

Features

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector − Emitter Voltage

MMBT5088L

MMBT5089L

30

25

Vdc

Collector − Base Voltage

MMBT5088L

MMBT5089L

35

30

Vdc

Emitter − Base Voltage

4.5

Vdc

Collector Current − Continuous

50

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance, Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

SOT−23 (TO−236)

CASE 318

STYLE 6

COLLECTOR

3

1

BASE

2

EMITTER

Device

Package

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMBT5088LT1G,

SMMBT5088LT1G

SOT−23

(Pb−Free)

3,000 / Tape &

Reel

MMBT5089LT1G,

SMMBT5089LT1G

SOT−23

(Pb−Free)

3,000 / Tape &

Reel

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

1

1x M

G

G

1x

= Device Code

x = Q for MMBT5088L

SMMBT5088L

x = R for MMBT5089L

SMMBT5089L

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

NSVMMBT5088LT3G

SOT−23

(Pb−Free)

10,000 / Tape &

Reel

www.onsemi.com