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MMBT5088L Datasheet(PDF) 2 Page - ON Semiconductor |
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MMBT5088L Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 5 page  MMBT5088L, MMBT5089L www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) MMBT5088L MMBT5089L V(BR)CEO 30 25 − − Vdc Collector − Base Breakdown Voltage (IC = 100 mAdc, IE = 0) MMBT5088L MMBT5089L V(BR)CBO 35 30 − − Vdc Collector Cutoff Current (VCB = 20 Vdc, IE = 0) MMBT5088L (VCB = 15 Vdc, IE = 0) MMBT5089L ICBO − − 50 50 nAdc Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) MMBT5088L (VEB(off) = 4.5 Vdc, IC = 0) MMBT5089L IEBO − − 50 100 nAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) MMBT5088L MMBT5089L (IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT5088L MMBT5089L (IC = 10 mAdc, VCE = 5.0 Vdc) MMBT5088L MMBT5089L hFE 300 400 350 450 300 400 900 1200 − − − − − Collector − Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) − 0.5 Vdc Base − Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) − 0.8 Vdc SMALL− SIGNAL CHARACTERISTICS Current − Gain — Bandwidth Product (IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz) fT 50 − MHz Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded) Ccb − 4.0 pF Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded) Ceb − 10 pF Small Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) MMBT5088L MMBT5089L hfe 350 450 1400 1800 − Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 kW, f = 1.0 kHz) MMBT5088L MMBT5089L NF − − 3.0 2.0 dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model |
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