BLS3135-20 datasheet(4/12 Pages) PHILIPS

4 / 12 page

2000 Feb 01

Philips Semiconductors

Product speciﬁcation

Microwave power transistor

BLS3135-20

handbook, halfpage

(1)

(2)

(3)

PD (W)

(W)

MCD863

Fig.2

Load power as a function of drive power;

typical values.

VCB = 40 V; class-C; tp = 100 µs; δ = 10%.

(1) f = 3.1 GHz.

(2) f = 3.3 GHz.

(3) f = 3.5 GHz.

handbook, halfpage

025

510

PL (W)

(dB)

MCD864

(3)

(1)

(2)

Fig.3

Power gain as a function of load power;

typical values.

VCB = 40 V; class-C; tp = 100 µs; δ = 10%.

(1) f = 3.1 GHz.

(2) f = 3.3 GHz.

(3) f = 3.5 GHz.

handbook, halfpage

025

510

PL (W)

ηC

(dB)

MCD865

(3)

(1)

(2)

Fig.4

Collector efficiency as a function of load

power; typical values.

VCB = 40 V; class-C; tp = 100 µs; δ = 10%.

(1) f = 3.1 GHz.

(2) f = 3.3 GHz.

(3) f = 3.5 GHz.

handbook, halfpage

(dB)

3.2

3.4

ηC

3.6

f (GHz)

ηC

(%)

MCD866

Fig.5

Power gain and efficiency as functions of

frequency; typical values.

VCB = 40 V; class-C; PL = 20 W; tp = 100 µs; δ = 10%.

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