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Application Support: Phone: 1-800-ANALOG-D

4

HMC659

v02.0217

GaAs PHEMT MMIC

POWER AMPLIFIER, DC - 15 GHz

Absolute Maximum Ratings

Drain Bias Voltage (Vdd)

+9 Vdc

Gate Bias Voltage (Vgg1)

0 to -2 Vdc

Gate Bias Voltage (Vgg2)

+2V to +4V

RF Input Power (RFIN)(Vdd = +12V)

+20 dBm

Channel Temperature

175 °C

Continuous Pdiss (T= 85 °C)

(derate 41 mW/°C above 85 °C)

3.69 W

Thermal Resistance

(channel to die bottom)

24.4 °C/W

Storage Temperature

-65 to 150°C

Operating Temperature

-55 to 85 °C

ESD Sensitivity (HBM)

Class1A, Passed 250V

Vdd (V)

Idd (mA)

+7.5

299

+8.0

300

+8.5

301

Typical Supply Current vs. Vdd

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Power Compression @ 15 GHz

Power Dissipation

Power Compression @ 2 GHz

Power Compression @ 7 GHz

0

4

8

12

16

20

24

28

32

0

3

6

9

12

15

Pout

Gain

PAE

INPUT POWER (dBm)

0

4

8

12

16

20

24

28

32

0

3

6

9

12

15

Pout

Gain

PAE

INPUT POWER (dBm)

0

4

8

12

16

20

24

28

32

0

3

6

9

12

15

Pout

Gain

PAE

INPUT POWER (dBm)

0

2

4

6

8

10

-10

-6

-2

2

6

10

14

18

Max Pdis @ 85C

2 GHz

12 GHz

INPUT POWER (dBm)