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MS1455 Datasheet(PDF) 1 Page - Advanced Power Technology |
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MS1455 Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 4 page ![]() 053-7078 Rev - 10-2002 MS1455 DESCRIPTION: DESCRIPTION: DESCRIPTION: DESCRIPTION: The MS1455 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806-866 MHz frequency range. Internal impedance matching assures optimum gain and efficiency across the entire frequency band. Gold metalization and emitter ballast resistors assures infinite VSWR capability and long term reliability. ABSOLUTE MAXIMU ABSOLUTE MAXIMU ABSOLUTE MAXIMU ABSOLUTE MAXIMUM RATINGS M RATINGS M RATINGS M RATINGS (Tcase = 25°°°°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 36 V VEBO Emitter-Base Voltage 4.0 V VCEO Collector-Emitter Voltage 18 V VCES Collector-Emitter Voltage 36 V PDISS Power Dissipation 150 W IC Device Current 9.0 A TJ Junction Temperature 200 °°°°C TSTG Storage Temperature -65 to +150 °°°°C Thermal Data Thermal Data Thermal Data Thermal Data RTH(J-C) Thermal Resistance Junction-case 1.2 °°°°C/W Features Features Features Features • 836 MHz • 12.5 VOLTS • POUT = 45 WATTS • GP = 4.7 dB MINIMUM • COMMON BASE CONFIGURATION RF & MICROWAVE TRANSISTORS 800 - 900 MHz APPLICATIONS |
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