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SC1405B Datasheet(PDF) 9 Page - Semtech Corporation |
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SC1405B Datasheet(HTML) 9 Page - Semtech Corporation |
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9 / 13 page ![]() 9 2004 Semtech Corp. www.semtech.com POWER MANAGEMENT SC1405B To eliminate the effect of the ringing on the boost ca- pacitor voltage, place a 4.7 - 10 Ohm resistor between boost Schottky diode and Vcc to filter the negative spikes on DRN Pin. Alternately, a Silicon diode, such as the commonly available 1N4148 can substitute for the Schottky diode and eliminate the need for the series re- sistor. Proper layout will guarantee minimum ringing and elimi- nate the need for external components. Use of SO-8 or other surface mount MOSFETs will reduce lead induc- tance and their parasitic effects. ASYNCHRONOUS OPERATION The SC1405B can be configured to operate in Asynchro- nous mode by pulling S-MOD to logic LOW, thus disabling the bottom FET drive. This has the effect of saving power at light loads since the bottom FET’s gate capacitance does not have to charged at the switching frequency. There can be a significant savings since the bottom driver can supply up to 2A pulses to the FET at the switching frequency. There is an additional efficiency benefit to operating in asynchronous mode. When operating in syn- chronous mode, the inductor current can go negative and flow in reverse direction when the bottom FET is on and the DC load is less than 1/2 inductor ripple current. Applications Information (Cont.) At that point, the inductor core and wire losses, depend- ing on the magnitude of the ripple current, can be quite significant. Operating in asynchronous mode at light loads effectively only charges the inductor by as much as needed to supply the load current, since the inductor never completely discharges at light loads. DC regula- tion can be an issue when operating in asynchronous mode, depending on the type of controller used and mini- mum load required to maintain regulation. If there are no Shottkey diodes used in parallel with bottom FET, the FET’s body diode will need to conduct in asynchronous mode. The high voltage drop of this diode must be con- sidered when determining the criteria for this mode of operation. DSPS DR This pin produces an output which is a logical duplicate of the bottom FET’s gate drive, if S-MOD is held LOW. OVP_S/OVER TEMP SHUTDOWN Output over-voltage protection may be implemented on the SC1405 independent of the PWM controller . A volt- age divider from the output is compared with the inter- nal bandgap voltage of 1.2V (typical). Upon exceeding this voltage, the overvoltage comparator disables the top FET, while turning on the bottom FET to allow discharge of the output capacitors excessive voltage through the output inductor. There should be sufficient RC time con- stant as well as voltage headroom on the OVP_S pin to assure it does not enter overvoltage mode inadvertently. The SC1405 will shutdown if its Tj exceeds 165°C. |
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