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11 ROHM Co., Ltd. All rights reserved.

Schottky Barrier Diode

RB080L-30

Applications

Dimensions (Unit : mm)

Land size figure (Unit : mm)

General rectification

Features

1)Small power mold type. (PMDS)

2)High reliability

Structure

Silicon epitaxial planer

Structure

Absolute maximum ratings (Ta=25

C)

Symbol

Unit

V

V

Io

A

A

Tj

C

Tstg

C

Electrical characteristics (Ta=25

C)

Symbol

Min.

Typ.

Max.

Unit

Conditions

-

-

0.51

V

-

-

150

μA

Forward voltage

Reverse current

Junction temperature

150

Storage temperature

40 to 150

(*1)Alumina substrate at the time of assemble 180° Half Sine Wave, Tc=100°C MAX.

Parameter

Reverse voltage (DC)

30

Average rectified forward current (*1)

5

Forward current surge peak (60Hz・1cyc)

70

Taping dimensions (Unit : mm)

Parameter

Limits

Reverse voltage (repetitive)

30

PMDS

2.0

ROHM : PMDS

JEDEC : SOD-106

①

year week factory

②

①

②

1

2

0.1±0.02

　　　 0.1

2.6±0.2

2.0±0.2

1.5±0.2

4.0

±0.1

2.9

±0.1

4.0

±0.1

2.0

±0.05

φ1.55±0.05

φ1.55

0.3

2.8MAX

1/4

2011.12 - Rev.B